Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. The production of these improved devices is currently on the way. Besides 64 Ã- 64 pixel arrays, prototypes with a sizes of 256 Ã- 256 pixels and 128 Ã- 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The new devices will have a pixel size of 75 μm Ã- 75 μm. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. Wölfel, S.ĭEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. Advancements in DEPMOSFET device developments for XEUS
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